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Oshima, Takeshi; Uedono, Akira*; Abe, Hiroshi; Chen, Z. Q.*; Ito, Hisayoshi; Yoshikawa, Masahito; Abe, Koji*; Eryu, Osamu*; Nakashima, Kenshiro*
Physica B; Condensed Matter, 308-310, p.652 - 655, 2001/12
Times Cited Count：6 Percentile：37.52(Physics, Condensed Matter)Co-implantation of Al(2E18/cm3) and C(1E18/cm3) into 6H-SiC and subsequent thermal annealing up to 1650 C werer carried out. Vacancy-type defects in the implanted layer were studied by monoenergetic positron beams. The mean size of vacancy-type defects in as-implanted samples is found to be close to the size of divacancy. Although vacancy clsters near a surface region were created by 1000 C-annealing, clustering is suppressed in a deep region.The mean size of vacancys decrease by annealing above 1000 C, and major vacancy defects annealed out after annealing at 1400 C. No significant difference in defect annealing between only Al- and co-implanted samles was observed.This result suggests that electrical activation of Al is enhanced by the site competition mechanism.
Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito
Materials Science Forum, 353-356, p.575 - 578, 2001/00
no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito
Dai-11-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu (BEAMS 2000) Hobunshu, p.139 - 142, 2000/11
no abstracts in English
Muramatsu, Yasuji; Takenaka, Hisataka*; Ueno, Yuko*; Gullikson, E. M.*; Perera, R. C. C.*
Applied Physics Letters, 77(17), p.2653 - 2655, 2000/10
Times Cited Count：13 Percentile：51.49(Physics, Applied)no abstracts in English
Ueda, Shuzo; Nishio, Satoshi; Yamada, Reiji; Seki, Yasushi; Kurihara, Ryoichi; Adachi, Junichi*; Yamazaki, Seiichiro*; Dream Design Team
Fusion Engineering and Design, 48(3-4), p.521 - 526, 2000/09
Times Cited Count：6 Percentile：42.66(Nuclear Science & Technology)no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito
Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.181 - 182, 2000/06
no abstracts in English
Seguchi, Tadao
Keiso Kagaku Kyoukaishi, (9), p.24 - 25, 1998/11
no abstracts in English
-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structuresYoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00
no abstracts in English
Ueda, Shuzo; Nishio, Satoshi; Seki, Yasushi; Kurihara, Ryoichi; Adachi, Junichi*; Yamazaki, Seiichiro*; DREAM-Design-Team
Journal of Nuclear Materials, 258-263, p.1589 - 1593, 1998/00
Times Cited Count：43 Percentile：93.87(Materials Science, Multidisciplinary)no abstracts in English
T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi
Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00
no abstracts in English
Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*
Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12
Times Cited Count：13 Percentile：57.46(Physics, Applied)no abstracts in English
Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*
Applied Physics A, 65(3), p.315 - 323, 1997/00
Times Cited Count：16 Percentile：63.3(Materials Science, Multidisciplinary)no abstracts in English
Ito, Hisayoshi; Aoki, Yasushi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.549 - 552, 1996/00
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; *; Yoshida, Sadafumi*
Journal of Applied Physics, 77(2), p.837 - 842, 1995/01
Times Cited Count：64 Percentile：91.99(Physics, Applied)no abstracts in English
-SiCIto, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
13th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Nniv., 0, p.75 - 80, 1994/12
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; *; Yoshida, Sadafumi*
Denshi Gijutsu Sogo Kenkyujo Iho, 58(2), p.125 - 132, 1994/00
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; L.Wei*; *; *; Okumura, Hajime*; Yoshida, Sadafumi*
Hyperfine Interactions, 79, p.725 - 729, 1993/00
Times Cited Count：19 Percentile：73.57(Physics, Atomic, Molecular & Chemical)no abstracts in English
Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; *; Yoshida, Sadafumi*
Mater. Res. Soc. Symp. Proc., Vol. 281, p.797 - 802, 1993/00
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials, p.143 - 148, 1992/00
no abstracts in English
Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; *; Okumura, Hajime*; Yoshida, Sadafumi*
J. Electron. Mater., 21(7), p.707 - 710, 1992/00
Times Cited Count：67 Percentile：94.38(Engineering, Electrical & Electronic)no abstracts in English
